Davood Shahrjerdi, Stephen W. Bedell, et al.
PVSC 2012
Heterojunction bipolar transistors with hydrogenated amorphous silicon (a-Si) contact layers on crystalline silicon (c-Si) substrates are reported. In particular, current gains exceeding 500 were achieved by heterojunction contacts further including embedded homo-junctions comprised of hydrogenated crystalline silicon (c-Si), having thicknesses much shorter than the diffusion length of minority carriers. The a-Si and c-Si layers were grown by plasma-enhanced chemical vapour deposition at temperatures close to 200°C. © 2012 The Institution of Engineering and Technology.
Davood Shahrjerdi, Stephen W. Bedell, et al.
PVSC 2012
T.H. Ning
Journal of Applied Physics
T.H. Ning
IRPS 2000
Bahman Hekmatshoar, Davood Shahrjerdi, et al.
Applied Physics Letters