P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Carbon nanotubes have potential in the development of high-speed and power-efficient logic applications1-7. However, for such technologies to be viable, a high density of semiconducting nanotubes must be placed at precise locations on a substrate. Here, we show that ion-exchange chemistry can be used to fabricate arrays of individually positioned carbon nanotubes with a density as high as 1 × 109 cm-2 - two orders of magnitude higher than previous reports8,9. With this approach, we assembled a high density of carbon-nanotube transistors in a conventional semiconductor fabrication line and then electrically tested more than 10,000 devices in a single chip. The ability to characterize such large distributions of nanotube devices is crucial for analysing transistor performance, yield and semiconducting nanotube purity. Copyright © 2012 Macmillan Publishers Limited.
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Robert W. Keyes
Physical Review B
R. Ghez, M.B. Small
JES
O.F. Schirmer, K.W. Blazey, et al.
Physical Review B