PaperGated Hall effect measurements in high-mobility n-type Si/SiGe modulation-doped heterostructuresK. Ismail, M. Arafa, et al.Applied Physics Letters
PaperHigh mobility electron gas in selectively doped n:AlGaAs/GaAs heterojunctionsM. Heiblum, E. Mendez, et al.Applied Physics Letters
PaperEffect of a thin transition layer at a Si-SiO2 interface on electron mobility and energy levelsFrank SternSolid State Communications