Mark W. Dowley
Solid State Communications
The conductivity of n channel MOSFET devices has been measured in the temperature range 4.2K<or=T<or=77K in samples with varying densities of interface charge. Contrary to previous results in this temperature range, the conductivity obeys the law lg sigma varies as T-1/3 indicative of a variable range hopping mechanism. The minimum metallic conductivity is found to vary linearly with the average separation of the oxide charge, contrary to prediction.
Mark W. Dowley
Solid State Communications
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
Gregory Czap, Kyungju Noh, et al.
APS Global Physics Summit 2025