Herwig Hahn, Marilyne Sousa, et al.
Journal of Physics D: Applied Physics
We present an inductively coupled-plasma reactive-ion etching process that simultaneously provides both a high etch rate and unprecedented selectivity for gallium phosphide (GaP) in the presence of aluminum gallium phosphide (AlxGa1-xP). Utilizing mixtures of silicon tetrachloride (SiCl4) and sulfur hexafluoride (SF6), selectivities exceeding 2700:1 are achieved at GaP etch rates above 3000 nm min-1. A design of experiments has been employed to investigate the influence of the inductively coupled-plasma power, the chamber pressure, the DC bias and the ratio of SiCl4 to SF6. The process enables the use of thin AlxGa1-xP stop layers even at aluminum contents of a few percent.
Herwig Hahn, Marilyne Sousa, et al.
Journal of Physics D: Applied Physics
Simon Hönl, Katharina Schneider, et al.
CLEO 2018
Katharina Schneider, Pol Welter, et al.
SPIE Nanoscience + Engineering 2017
Q. Ding, Yannick Baumgartner, et al.
EDTM 2020