Herwig Hahn, Marc Seifried, et al.
DRC 2017
We present an inductively coupled-plasma reactive-ion etching process that simultaneously provides both a high etch rate and unprecedented selectivity for gallium phosphide (GaP) in the presence of aluminum gallium phosphide (AlxGa1-xP). Utilizing mixtures of silicon tetrachloride (SiCl4) and sulfur hexafluoride (SF6), selectivities exceeding 2700:1 are achieved at GaP etch rates above 3000 nm min-1. A design of experiments has been employed to investigate the influence of the inductively coupled-plasma power, the chamber pressure, the DC bias and the ratio of SiCl4 to SF6. The process enables the use of thin AlxGa1-xP stop layers even at aluminum contents of a few percent.
Herwig Hahn, Marc Seifried, et al.
DRC 2017
Veeresh Deshpande, Herwig Hahn, et al.
IEEE T-ED
Simon Hönl, Dalziel J. Wilson, et al.
IPRSN 2018
Yannick Baumgartner, Benedikt F. Mayer, et al.
GFP 2017