Lerong Cheng, Jinjun Xiong, et al.
ASP-DAC 2008
Highly uniform step and termination structures on 4H- and 6H-SiC(0001) surfaces have been prepared via moderate annealing in disilane. Atomic force microscopy and dark-field low-energy electron microscopy imaging indicate single-phase terminations separated solely by half-unit-cell-height steps, driven by stacking fault energy. The atomic structure of 4H-SiC(0001)-√3 × √3R30°-Si has been determined quantitatively by nanospot low-energy electron diffraction. The topmost stacking fault at the 4H surface has been found to be between the second and third bilayers. © 2011 by International Business Machines Corporation.
Lerong Cheng, Jinjun Xiong, et al.
ASP-DAC 2008
John M. Boyer, Charles F. Wiecha
DocEng 2009
Israel Cidon, Leonidas Georgiadis, et al.
IEEE/ACM Transactions on Networking
Hans Becker, Frank Schmidt, et al.
Photomask and Next-Generation Lithography Mask Technology 2004