Thomas R. Puzak, A. Hartstein, et al.
CF 2007
Highly uniform step and termination structures on 4H- and 6H-SiC(0001) surfaces have been prepared via moderate annealing in disilane. Atomic force microscopy and dark-field low-energy electron microscopy imaging indicate single-phase terminations separated solely by half-unit-cell-height steps, driven by stacking fault energy. The atomic structure of 4H-SiC(0001)-√3 × √3R30°-Si has been determined quantitatively by nanospot low-energy electron diffraction. The topmost stacking fault at the 4H surface has been found to be between the second and third bilayers. © 2011 by International Business Machines Corporation.
Thomas R. Puzak, A. Hartstein, et al.
CF 2007
Alessandro Morari, Roberto Gioiosa, et al.
IPDPS 2011
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Liat Ein-Dor, Y. Goldschmidt, et al.
IBM J. Res. Dev