A quantitative analysis of OS noise
Alessandro Morari, Roberto Gioiosa, et al.
IPDPS 2011
Highly uniform step and termination structures on 4H- and 6H-SiC(0001) surfaces have been prepared via moderate annealing in disilane. Atomic force microscopy and dark-field low-energy electron microscopy imaging indicate single-phase terminations separated solely by half-unit-cell-height steps, driven by stacking fault energy. The atomic structure of 4H-SiC(0001)-√3 × √3R30°-Si has been determined quantitatively by nanospot low-energy electron diffraction. The topmost stacking fault at the 4H surface has been found to be between the second and third bilayers. © 2011 by International Business Machines Corporation.
Alessandro Morari, Roberto Gioiosa, et al.
IPDPS 2011
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
Limin Hu
IEEE/ACM Transactions on Networking
Hendrik F. Hamann
InterPACK 2013