NONEQUILIBRIUM PHONONS AND DISORDER IN Al//xGa//1// minus //xAs.
J.A. Kash, J.C. Tsang, et al.
TMPEO 1986
The rates at which hot electrons scatter from the valley to the L and X valleys in GaAs have been measured as a function of electron energy. Scattering times are determined from the relative efficiency of recombination of hot electrons with neutral acceptors at low injected-carrier densities. Representative scattering times are L=540±120 fsec for 0.48-eV electrons and X=180±40 fsec for 0.58-eV electrons. Our results enable us to reconcile the large range of scattering rates reported in other experiments and demonstrate the power of this cw probe to study subpicosecond electron dynamics. © 1989 The American Physical Society.
J.A. Kash, J.C. Tsang, et al.
TMPEO 1986
F. Agahi, B. Pezeshki, et al.
Electronics Letters
J.A. Kash, R. Ulbrich, et al.
Solid State Electronics
L. Schares, C.L. Schow, et al.
ECOC 2005