D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
The theory of the dependence of electron temperature on Joule energy input, for degenerate carriers in a heterolayer, is outlined. Numerical results for GaAs electrons are computed and displayed. © 1984 The American Physical Society.
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
Mark W. Dowley
Solid State Communications