P.C. Pattnaik, D.M. Newns
Physical Review B
We present experimental studies on the performance of ultra-thin body SOI tunnel FETs depending on channel length, gate oxide thickness and source/drain doping concentrations. Electrical measurements show no dependance on channel length, however, a strong dependance on gate oxide thickness and doping concentration is found. Our experimental results match calculations based on a simple Landauer model employing the Wenzel-Kramer-Brillouin approximation for the tunneling process. Bandgap narrowing and the electrostatics of the tunneling junction are found to be the main factors impacting the on-state performance of the tunnel FET. © 2009 Elsevier Ltd. All rights reserved.
P.C. Pattnaik, D.M. Newns
Physical Review B
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
J. Tersoff
Applied Surface Science
Peter J. Price
Surface Science