Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry
We present experimental studies on the performance of ultra-thin body SOI tunnel FETs depending on channel length, gate oxide thickness and source/drain doping concentrations. Electrical measurements show no dependance on channel length, however, a strong dependance on gate oxide thickness and doping concentration is found. Our experimental results match calculations based on a simple Landauer model employing the Wenzel-Kramer-Brillouin approximation for the tunneling process. Bandgap narrowing and the electrostatics of the tunneling junction are found to be the main factors impacting the on-state performance of the tunnel FET. © 2009 Elsevier Ltd. All rights reserved.
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry
J.A. Barker, D. Henderson, et al.
Molecular Physics
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993