Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
Discrete deep levels form at Al/GaAs(100) interfaces whose energies and state densities change with surface preparation conditions. Modifications in surface chemical composition and reconstruction with annealing temperature produce systematic changes in a set of interface states spanning the energy range ≈0.8 eV to 1.2 eV, as well as alter the interface barrier height. These results demonstrate close correlation between the interface states observed directly via low-energy cathodoluminescence spectroscopy and the Fermi level movement at Al/GaAs(100) interfaces and emphasize the central role of surface preparation in achieving controlled Schottky barrier behavior. © 1992.
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
Mark W. Dowley
Solid State Communications
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020
T.N. Morgan
Semiconductor Science and Technology