Joachim N. Burghartz, John D. Cressler, et al.
IEEE Electron Device Letters
Rapid fluctuations of power supply values, or switching noise, can have a significant effect on VLSI circuit speed. This is shown by comparing circuit simulations with measurements of the critical path delay of a self-resetting SRAM. It is shown that including the measured high frequency noise in the circuit simulation leads to very accurate prediction of circuit speed.
Joachim N. Burghartz, John D. Cressler, et al.
IEEE Electron Device Letters
Keith A. Jenkins, J.Y.-C. Sun
IEEE Electron Device Letters
Hyun J. Shin, P.F. Lu, et al.
Bipolar Circuits and Technology Meeting 1990
K. Rim, R. Anderson, et al.
Solid-State Electronics