C.T. Chuang, P.F. Lu
IEDM 1989
Rapid fluctuations of power supply values, or switching noise, can have a significant effect on VLSI circuit speed. This is shown by comparing circuit simulations with measurements of the critical path delay of a self-resetting SRAM. It is shown that including the measured high frequency noise in the circuit simulation leads to very accurate prediction of circuit speed.
C.T. Chuang, P.F. Lu
IEDM 1989
Y. Mii, S. Rishton, et al.
IEEE Electron Device Letters
K. Rim, J.O. Chu, et al.
VLSI Technology 2002
J.N. Burghartz, J.H. Comfort, et al.
IEDM 1990