G. Timp, A.B. Fowler, et al.
Physical Review B
Paper
Impurity bands in inversion layers
Abstract
Quasi-two-dimensional impurity bands caused by sodium ions at the interface of silicon and silicon dioxides have been studied over the last several years. Excitation to the mobility edge, nearest-neighbour hopping, and variable-range hopping have been observed and analysed. The results are reviewed and discussed. © 1980 Taylor & Francis Group, LLC.
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