Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
A technique is given for measuring the MOS generation lifetime of minority carriers as a function of depth from the silicon wafer surface. The technique monitors a transient current instead of the more commonly utilized transient capacitance, and is capable of obtaining a whole in‐depth lifetime profile in one measurement. Heat treated silicon wafers examined in this study exhibit a constant high lifetime close to the wafer surface, and the lifetime decreases toward the bulk. This is correlated to SiO2 precipitation and gettering behavior. Copyright © 1985 WILEY‐VCH Verlag GmbH & Co. KGaA
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
John G. Long, Peter C. Searson, et al.
JES