Julien Autebert, Aditya Kashyap, et al.
Langmuir
We have investigated the in-plane transport of photoexcited carriers and excitons in Al0.3Ga0.7As/GaAs quantum well structures as a function of excitation photon energy and temperature at low carrier density (108 cm-2). We have discovered a strong correlation between the diffusivity and the excitation photon energy; the exciton diffusivity becomes quenched as the excitation photon energy decreases closer to the heavy-hole exciton state. We have also found significant enhancement of diffusivity when a light-hole exciton state is resonantly excited. We attribute the enhancement to the difference between exciton scattering and free carrier scattering. © 1993.
Julien Autebert, Aditya Kashyap, et al.
Langmuir
Imran Nasim, Melanie Weber
SCML 2024
J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials
Revanth Kodoru, Atanu Saha, et al.
arXiv