W.P. Risk, S.D. Lau
Applied Physics Letters
Knowledge of the thermal conductivity of phase-change materials is essential for accurate modeling of nonvolatile memory devices that incorporate them. The " 3ω method" is a well-established and sensitive technique for measuring this property. We report two new extensions of the 3ω technique that feature in situ monitoring of the phase-change material as it transitions from the as-deposited amorphous phase to the crystalline phase. One technique crystallizes the entire sample in a vacuum oven, while using the 3ω voltage to monitor the phase transition. The other technique uses the 3ω heater to crystallize only the material in the region of measurement. © 2008 American Institute of Physics.
W.P. Risk, S.D. Lau
Applied Physics Letters
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