E.E. Marinero, C.T. Rettner, et al.
IQEC 1984
Knowledge of the thermal conductivity of phase-change materials is essential for accurate modeling of nonvolatile memory devices that incorporate them. The " 3ω method" is a well-established and sensitive technique for measuring this property. We report two new extensions of the 3ω technique that feature in situ monitoring of the phase-change material as it transitions from the as-deposited amorphous phase to the crystalline phase. One technique crystallizes the entire sample in a vacuum oven, while using the 3ω voltage to monitor the phase transition. The other technique uses the 3ω heater to crystallize only the material in the region of measurement. © 2008 American Institute of Physics.
E.E. Marinero, C.T. Rettner, et al.
IQEC 1984
W.-Y. Lee, J.R. Salem, et al.
Thin Solid Films
D. Kulginov, M. Persson, et al.
Journal of Physical Chemistry
H. Hou, Y. Huang, et al.
Journal of Chemical Physics