Soft x-ray diffraction of striated muscle
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
Hole tunneling from an accumulation layer in single-barrier p - type GaAs-undoped AlxGa1-xAs-p+-type GaAs capacitors results in complex current-voltage (I-V) characteristics. At low bias, in the direct tunneling regime, several reproducible voltage-controlled negative resistance regions can occur. I-V curves for a given sample are reproducible while I-V curves for nominally identical samples vary from sample to sample. I-V curves are exponential in voltage with fluctuations in ln(dJ/dV)∼1. Detailed structure in curves of d(lnJ)/dV versus voltage is temperature dependent for T<70 K. At 1.7 K structure in derivative curves is independent of magnetic field. The observed behavior is consistent with the models reviewed by Raikh and Ruzin for incoherent mesoscopic tunneling through states in a randomly nonuniform barrier. The origin of the states in the nominally undoped AlxGa1-xAs barrier is probably Be diffusing from regions of high doping sample growth. © 1992 The American Physical Society.
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
Imran Nasim, Melanie Weber
SCML 2024
J.C. Marinace
JES
R. Ghez, J.S. Lew
Journal of Crystal Growth