Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
We have investigated the intrasubband spin-density excitation (SDE) in an asymmetrically doped GaAs-AlGaAs single quantum well with balanced Rashba and Dresselhaus spin-orbit interaction strengths by inelastic light scattering. For this unique symmetry, the combined spin-orbit field is either parallel or antiparallel to the [11̄0] in-plane direction of the quantum well for all wave vectors of the two-dimensional reciprocal space. In backscattering geometry, the SDE is formed by spin-flip intrasubband transitions of the spin-split subband. Via the splitting of the intrasubband SDE, we have directly detected the spin splitting of the conduction band due to the anisotropic spin-orbit field. As expected, the splitting is nonzero if a wave vector is transferred perpendicular to the direction of the spin-orbit field and close to zero for a parallel wave-vector transfer. The extracted values for the spin-orbit strength and for the wavelength of a persistent spin helix compare well with results of previous experiments of direct spatial mapping of the spin helix. © 2014 American Physical Society.
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials