High speed lateral trench detectors with a junction substrate
Qiqing Ouyang, J. Schaub
Device Research Conference 2003
An optical receiver consisting of an avalanche photodiode integrated with a trans-impedance amplifier is reported. The optical receiver was fabricated on a 2 μm thick SOI substrate in a 130nm unmodified CMOS process flow. The unity gain external quantum efficiency of the photodetectors was ∼10% at 850 nm. Optimum sensitivity was achieved for an avalanche gain M=8. This gain accounted for 5 dB improvement in receiver sensitivity at 2 Gbit/s. Operation at 8 Gbit/s was achieved only when the photodetector was biased in the avalanche gain regime.
Qiqing Ouyang, J. Schaub
Device Research Conference 2003
A. Taratorin, D.C. Cheng, et al.
IEEE Transactions on Magnetics
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International Journal of High Speed Electronics and Systems
G. Dehlinger, S.J. Koester, et al.
IEEE Photonics Technology Letters