William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
This paper reviews the physical mechanisms that are responsible for interband resonant tunneling in type II heterostructures, in particular GaSb/AlSb/Ir,As/AlSb/GaSb. An analysis of their low-temperature current-voltage characteristics, when combined with the application of strong magnetic fields and hydrostatic pressure, provides detailed information on energy and momentum conservation rules, band parameters, and magnetic energy levels, including spin splitting of the lowest Landau level. © 1992.
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Michiel Sprik
Journal of Physics Condensed Matter
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020
David B. Mitzi
Journal of Materials Chemistry