Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
The interband sum frequency generation process due to three-wave interaction of interband and intersubband coupling lights has been investigated in a semiconductor quantum well using the perturbational density matrix approach. The origin of the nonlinear process lies in the second-order susceptibility Xc2-h1(2) arising due to the optical transition between the second conduction subband and the first heavy hole state. Both the sign and the magnitude of the second-order susceptibility of the well may be controlled by the carrier density level and the frequency of the intersubband field.
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
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