J. Tersoff
Applied Surface Science
The interband sum frequency generation process due to three-wave interaction of interband and intersubband coupling lights has been investigated in a semiconductor quantum well using the perturbational density matrix approach. The origin of the nonlinear process lies in the second-order susceptibility Xc2-h1(2) arising due to the optical transition between the second conduction subband and the first heavy hole state. Both the sign and the magnitude of the second-order susceptibility of the well may be controlled by the carrier density level and the frequency of the intersubband field.
J. Tersoff
Applied Surface Science
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
T.N. Morgan
Semiconductor Science and Technology
J.H. Stathis, R. Bolam, et al.
INFOS 2005