B.S. Berry, W.C. Pritchet
Journal of Applied Physics
The internal tensile stress in polycrystalline diamond films deposited on silicon substrates has been measured from 100 to 700 K by a vibrating-membrane method. The stress increases strongly with temperature, in a manner consistent with the elastic accommodation of the differential thermal strain between diamond and silicon. The results indicate that the films contain a tensile growth stress of about 500 MPa at the deposition temperature of 1123 K. Derived values of the biaxial elastic modulus fall in the range 730-850 GPa.
B.S. Berry, W.C. Pritchet
Journal of Applied Physics
W.S. Bacsa, J.S. Lannin, et al.
Physical Review B
J.M.E. Harper, M. Heiblum, et al.
Journal of Applied Physics
J.M.E. Harper, H.T.G. Hentzell, et al.
JVSTA