R. Ludeke, M.T. Cuberes, et al.
Applied Physics Letters
SHEED measurements have been made on the surface of GaAs crystals during in situ epitaxial deposition. The (bulk) spot pattern changes to a streak pattern as deposition proceeds, as noted by other workers. An interpretation of these patterns is given in terms of simple kinematic scatttering from flat surface regions. This leads to a straightforward interpretation of the observed specular reflection phenomenon, enables the area of coherent scattering to be estimated (0.16 μ2 in the present experiments), and should permit a more detailed analysis of ordered surface structures. © 1973 American Institute of Physics.
R. Ludeke, M.T. Cuberes, et al.
Applied Physics Letters
K.K. Shih, D.B. Dove
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
D. Heitman, M. Ziesmann, et al.
Physical Review B
L. Esaki, L.L. Chang, et al.
Physical Review