L.L. Chang
Solid-State Electronics
SHEED measurements have been made on the surface of GaAs crystals during in situ epitaxial deposition. The (bulk) spot pattern changes to a streak pattern as deposition proceeds, as noted by other workers. An interpretation of these patterns is given in terms of simple kinematic scatttering from flat surface regions. This leads to a straightforward interpretation of the observed specular reflection phenomenon, enables the area of coherent scattering to be estimated (0.16 μ2 in the present experiments), and should permit a more detailed analysis of ordered surface structures. © 1973 American Institute of Physics.
L.L. Chang
Solid-State Electronics
T.C. Chicu, K.K. Shih, et al.
Microlithography 1994
L.L. Chang, E. Mendez, et al.
Surface Science
R. Ludeke
Physical Review Letters