Paper

01 Jan 1987

Invention of the Injection Laser at IBM

View publication

Abstract

The events leading up to the observation of stimulated emission from GaAs p–n junctions at the IBM T. J. Watson Research Laboratory in 1962 are recounted, and the subsequent occurrences which culminated with the making of a GaAs laser are described. © 1987 IEEE

Related

Paper

Characterization of large magnetic anisotropies in (100)- and (111)-oriented Co/Pt multilayers by Brillouin light scattering

J.V. Harzer, B. Hillebrands, et al.

Journal of Magnetism and Magnetic Materials

Paper

Specific heat of silicon in the millidegree region

Robert W. Keyes

Physical Review B

Review

Solution-processed inorganic semiconductors

David B. Mitzi

Journal of Materials Chemistry

Conference paper

Growth and transport properties of multilayer superconducting films of Nd_1.83Ce_0.17CuO_x / YBa₂Cu₃O_7-δ

A. Gupta, R. Gross, et al.

SPIE Advances in Semiconductors and Superconductors 1990

View all publications