Will SOI have a life for the low-power market?
Jin Cai, Zhibin Ren, et al.
IEEE International SOI Conference 2008
We present first-principle analytical derivations and numerically modeled data to show that the gate capacitance per unit gate area C of extremely thin undoped-channel single-gate and double-gate field-effect transistor geometries in the extreme quantum limit with single-subband occupancy can be written as 1/C=1/C+N/C+N/ηC, where N is the number of gates, C is the oxide capacitance per unit area, C is the density-of-states capacitance per unit area, C is the wave function spreading capacitance per unit area, and η is a constant on the order of 1.
Jin Cai, Zhibin Ren, et al.
IEEE International SOI Conference 2008
Amlan Majumdar
IEEE Electron Device Letters
Amlan Majumdar, Dimitri A. Antoniadis
DRC 2012
Stephen W. Bedell, Amlan Majumdar, et al.
IEEE Electron Device Letters