Amlan Majumdar, Zhibin Ren, et al.
IEEE Transactions on Electron Devices
We present first-principle analytical derivations and numerically modeled data to show that the gate capacitance per unit gate area C of extremely thin undoped-channel single-gate and double-gate field-effect transistor geometries in the extreme quantum limit with single-subband occupancy can be written as 1/C=1/C+N/C+N/ηC, where N is the number of gates, C is the oxide capacitance per unit area, C is the density-of-states capacitance per unit area, C is the wave function spreading capacitance per unit area, and η is a constant on the order of 1.
Amlan Majumdar, Zhibin Ren, et al.
IEEE Transactions on Electron Devices
Amlan Majumdar, Chung-Hsun Lin
Applied Physics Letters
Guy M. Cohen, Amlan Majumdar, et al.
physica status solidi RRL
Jin Cai, Zhibin Ren, et al.
IEEE International SOI Conference 2008