Investigation of GaAs/AIGaAs quantum well lasers by micro raman spectroscopy

Abstract

GaAs/AlGaAs quantum well lasers are investigated with non destructive micro Raman spectroscopy. Electronic properties and temperature behaviour at the mirror surfaces were studied by probe lasers with high spatial resolution. Electric field induced Raman scattering (EFIRS) is suitable for observing the band bending, caused by surface states. Temperature behaviour of coated and uncoated mirrors and the spatial temperature profile are investigated by measuring the Stokes- and anti-Stokes intensities of the GaAs TO-phonon. Resonant electronic Raman scattering leads to spatial distribution of carrier densities.