P. Bauer, B. Hecht, et al.
Ultramicroscopy
We present data obtained on a set of symmetric GaAs/AlGaAs double-barrier quantum-well structures in which the thickness of the AlGaAs barriers has been systematically varied from 31 to 7.5 nm. Low-temperature I(V) characteristics, temperature dependencies, and magnetotunneling have been investigated. Our data suggest a dominance of sequential tunneling processes in the range investigated and point to interface roughness in the well as the possible cause for the large valley currents. Our best devices exhibit a current peak-to-valley ratio of about 20.
P. Bauer, B. Hecht, et al.
Ultramicroscopy
G.J. Norga, A. Guiller, et al.
MRS Proceedings 2003
H. Schwer, E.M. Kopnin, et al.
Physica C: Superconductivity and its Applications
D.J. Arent, L. Brovelli, et al.
Applied Physics Letters