W.J. Gallagher, T. Worthington, et al.
Physica B+C
Paper
Lanthanum gallate substrates for epitaxial high-temperature superconducting thin films
Abstract
We demonstrate that lanthanum gallate (LaGaO3) has considerable potential as an electronic substrate material for high-temperature superconducting films. It provides a good lattice and thermal expansion match to YBa2Cu3O7-x, can be grown in large crystal sizes, is compatible with high-temperature film processing, and has a reasonably low dielectric constant (ε≅25) and low dielectric losses. Epitaxial YBa2Cu3O7-x films grown on LaGaO3 single-crystal substrates by three techniques have zero resistance between 87 and 91 K.
Related
R.H. Koch, G. Grinstein, et al.
Physical Review Letters
E.A. Giess, B.E. Argyle, et al.
Materials Research Bulletin
B.A. Calhoun, E.A. Giess, et al.
Applied Physics Letters