Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
We have simulated the failure of three-dimensional fcc solids containing voids under mode one tension using molecular dynamics, simple interatomic potentials and a system comprising 15 million atoms. When a linear brittle crack front approaches a void, the void acts to impede the progress of the front by causing dislocation emission, thereby rendering the system ductile. When two voids are alone in the system, failure is via ductility with, first, dislocation loops being emitted from the void surfaces and, then, these loops interacting with one another to form.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
Michiel Sprik
Journal of Physics Condensed Matter
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials