S. Subbanna, P. Agnello, et al.
IEDM 1996
Experiments are described in which ∼0.2-s-wide argon laser pulses are incident on a 6-μm-thick n- Si epitaxial layer. Local melting and refreezing of both the layer and a small volume of the underlying p+ boron-doped Si substrate occur. In the molten phase, boron diffusion from the substrate is sufficient to make a low resistance path between the front surface and the substrate, with a nearly uniform dopant concentration of 5×10 18/cm3. The melted/recrystallized front surface diameter is ∼50 μm. Unique features and applications of this type of substrate contacting are discussed.
S. Subbanna, P. Agnello, et al.
IEDM 1996
James Warnock, Y.-H. Chan, et al.
ISSCC 2011
D.L. Harame, E. Ganin, et al.
IEDM 1991
J.B. Kuang, M.J. Saccamango, et al.
International Journal of Electronics