N. Caswell, P.Y. Yu
Physical Review B
Large photoenhancement (by a factor of ≳100 in some devices) of electroluminescence in thin-film ZnS: Mn devices has been observed near and above the electroluminescence threshold effects when the devices were excited with the near-uv lines of an Ar+ laser. The intensity of the photoenhanced electroluminescence was found to have a sublinear dependence on the laser intensity, saturate, and then decrease with increased laser power.
N. Caswell, P.Y. Yu
Physical Review B
E.E. Mendez, E.A. Giess, et al.
JES
I.F. Chang, P. Thioulouse
Journal of Applied Physics
I.F. Chang, Chin-Tu Chen, et al.
COMPSAC 1990