S.C. Varshney, J.F. Vetelino, et al.
Physical Review B
Large photoenhancement (by a factor of ≳100 in some devices) of electroluminescence in thin-film ZnS: Mn devices has been observed near and above the electroluminescence threshold effects when the devices were excited with the near-uv lines of an Ar+ laser. The intensity of the photoenhanced electroluminescence was found to have a sublinear dependence on the laser intensity, saturate, and then decrease with increased laser power.
S.C. Varshney, J.F. Vetelino, et al.
Physical Review B
E.A. Giess, C.F. Guerci, et al.
Journal of Crystal Growth
I.F. Chang, A.A. Onton
Journal of Electronic Materials
I.F. Chang
JES