Lattice distortions for arsenic in single-crystal silicon

Abstract

Extended x-ray-absorption fine-structure measurements for 0.1, 0.7, and 7 at.% arsenic impurities in single-crystal silicon yield As-to-Si nearest-neighbor distances of 2.41 ± 0.02, which are 0.06 (2.5%) greater than the Si-to-Si distance in pure silicon. Next-nearest-neighbor distances are 3.85 ± 0.02, only 0.01 (0.3%) greater than the corresponding Si-to-Si distance. © 1986 The American Physical Society.