R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
Extended x-ray-absorption fine-structure measurements for 0.1, 0.7, and 7 at.% arsenic impurities in single-crystal silicon yield As-to-Si nearest-neighbor distances of 2.41 ± 0.02, which are 0.06 (2.5%) greater than the Si-to-Si distance in pure silicon. Next-nearest-neighbor distances are 3.85 ± 0.02, only 0.01 (0.3%) greater than the corresponding Si-to-Si distance. © 1986 The American Physical Society.
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
R. Ghez, M.B. Small
JES
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
Lawrence Suchow, Norman R. Stemple
JES