K.N. Tu
Materials Science and Engineering: A
Extended x-ray-absorption fine-structure measurements for 0.1, 0.7, and 7 at.% arsenic impurities in single-crystal silicon yield As-to-Si nearest-neighbor distances of 2.41 ± 0.02, which are 0.06 (2.5%) greater than the Si-to-Si distance in pure silicon. Next-nearest-neighbor distances are 3.85 ± 0.02, only 0.01 (0.3%) greater than the corresponding Si-to-Si distance. © 1986 The American Physical Society.
K.N. Tu
Materials Science and Engineering: A
K.A. Chao
Physical Review B
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997