Physical Review Letters

Paper

20 Jun 1994

LeGoues, Mooney, and Tersoff reply [2]

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Abstract

No abstract available.

Paper

Evidence for large lattice relaxation at the DX center in Si-doped AlxGa1-xAs

P.M. Mooney, G. Northrop, et al.

Physical Review B

Paper

Nucleation of dislocations in SiGe layers grown on (001)Si

P.M. Mooney, F.K. LeGoues, et al.

Journal of Applied Physics

Paper

Formation of compositionally abrupt axial heterojunctions in silicon-germanium nanowires

C.-Y. Wen, M.C. Reuter, et al.

Science

Conference paper

UNIFIED VIEW OF SCHOTTKY BARRIER FORMATION.

J. Tersoff

ICPS Physics of Semiconductors 1984

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