Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
The decay times of two bound exciton emission lines in InP have been measured at very low excitation levels and found to be of the order of 0.5 and 1.5 ns. These times agree within a factor of two with theoretical values, which were estimated using the model of Rashba and Gurgenishvili. The oscillator strength per molccule of the free exciton has been evaluated and found to be 8 × 10−5 The bound exciton oscillator strengths are larger by five orders of magnitude. Copyright © 1971 WILEY‐VCH Verlag GmbH & Co. KGaA
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology