Sette et al. respond
F. Sette, S.J. Pearton, et al.
Physical Review Letters
The local structure of S implanted in GaAs has been determined by extended x-ray-absorption fine structure by monitoring of the S K fluorescence yield. The S first-neighbor shell shows a significant static broadening compared to the S second- and third-neighbor shells. This indicates two S configurations of approximately equal population: (1) substitutional S on an As site and (2) a complex formed by S on an As site and an As vacancy on the second-neighbor shell with a S-first-neighbor distance relaxation of 0.14 0.04. The two-site configuration explains the disparity between implanted S concentration and net electrical activity. © 1986 The American Physical Society.
F. Sette, S.J. Pearton, et al.
Physical Review Letters
H. Cho, K.B. Jung, et al.
Applied Surface Science
K.B. Jung, J. Hong, et al.
JES
K.B. Jung, J. Hong, et al.
Journal of Magnetism and Magnetic Materials