A.P. Hitchcock, D.C. Newbury, et al.
The Journal of Chemical Physics
Paper
Local structure of S impurities in gaAs
Abstract
The local structure of S implanted in GaAs has been determined by extended x-ray-absorption fine structure by monitoring of the S K fluorescence yield. The S first-neighbor shell shows a significant static broadening compared to the S second- and third-neighbor shells. This indicates two S configurations of approximately equal population: (1) substitutional S on an As site and (2) a complex formed by S on an As site and an As vacancy on the second-neighbor shell with a S-first-neighbor distance relaxation of 0.14 0.04. The two-site configuration explains the disparity between implanted S concentration and net electrical activity. © 1986 The American Physical Society.
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