U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
The dependence on the scattering wave vector of a nonequilibrium LO phonon distribution generated by hot-electron relaxation is measured in thick GaAs and Al0.11Ga0.89As layers, and a 500- GaAs layer using picosecond Raman scattering in back and forward scattering geometries. The absence of q=0 nonequilibrium phonons in the thick samples, and their presence in the 500- sample, demonstrates that Raman-active LO phonons in AlxGa1-xAs have well-defined wave vectors and are not localized by alloy disorder. © 1988 The American Physical Society.
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009