Localized states at the conduction-band edge of amorphous silicon nitride detected by resonance photoemission

Abstract

The SiL absorption edge in amorphous silicon nitride (a-SiNix:H) exhibits a Fano-type antiresonance just below threshold for x=1.20 and 1.40. At the same energy the valence-band photoemission cross section is resonantly enhanced in these samples for those features that carry an appreciable Si-3s-derived partial density of states. We argue that the Fano resonance involves Si-Si antibonding states at the bottom of the conduction bands that become localized as their number decreases with increasing nitrogen content compared to that of Si-N bonds. © 1984 The American Physical Society.