P. Molinàs‐Mata, M. Böhringer, et al.
physica status solidi (a)
The SiL absorption edge in amorphous silicon nitride (a-SiNix) exhibits a Fano-type antiresonance just below threshold for x=1.20 and 1.40. At the same energy the valence-band photoemission cross section is resonantly enhanced in these samples for those features that carry an appreciable Si-3s-derived partial density of states. We argue that the Fano resonance involves Si-Si antibonding states at the bottom of the conduction bands that become localized as their number decreases with increasing nitrogen content compared to that of Si-N bonds. © 1984 The American Physical Society.
P. Molinàs‐Mata, M. Böhringer, et al.
physica status solidi (a)
M. Hundhausen, L. Ley, et al.
Physical Review Letters
L. Ley, R.A. Pollak, et al.
Physical Review B
D. Straub, L. Ley, et al.
Physical Review B