Sunil Shukla, Bruce Fleischer, et al.
IEEE SSC-L
We report the first study of the low-frequency noise in self-aligned npn bipolar transistors, which use the polysilicon emitter. Some of these devices showed excess noise spectra different from the 1/f law generally observed in diffused junction transistors, and the spectral shape S(f) was found to vary from sample to sample. For instance, we have observed two different characteristics, S(f)∼1/f and S(f)∼1/[1+(f/f0)2], in two adjacent transistors on the same chip. We attribute the latter to carrier trapping in the oxide barrier at the poly-/monosilicon boundary, whose inhomogeneity could explain the wide variation of the noise spectra.
Sunil Shukla, Bruce Fleischer, et al.
IEEE SSC-L
Ching Zhou, Yu-Shiang Lin, et al.
ICCD 2016
Monodeep Kar, Joel Silberman, et al.
ISSCC 2024
Pong-Fei Lu, Hyun J. Shin, et al.
VLSI-TSA 1993