G. Northrop, D.J. Wolford, et al.
Solid State Communications
Structural [nuclear magnetic and electron spin resonance (ESR), infrared spectroscopy], optical (absorption, photoacoustic, photoluminescence), and electrical data are presented for amorphous hydrogenated germanium (a-Ge) prepared by homogeneous chemical vapor deposition (HOMOCVD). Like HOMOCVD prepared amorphous hydrogenated silicon, these a-Ge materials exhibit very low ESR spin densities and systematically varying optical gaps and hydrogen contents. Nevertheless, the material displays no subband gap photoluminescence and minimal photoconductivity, suggesting that a spinless defect may ultimately limit the device application of all types of a-Ge and a-(Ge,Si) films.
G. Northrop, D.J. Wolford, et al.
Solid State Communications
E.A. Giess, B.A. Scott, et al.
Materials Research Bulletin
A.G. Schrott, J.A. Mishwich, et al.
Materials Research Society Symposium - Proceedings
G. Northrop, J.F. Morar, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures