B.A. Scott, W.L. Olbricht, et al.
JVSTA
Structural [nuclear magnetic and electron spin resonance (ESR), infrared spectroscopy], optical (absorption, photoacoustic, photoluminescence), and electrical data are presented for amorphous hydrogenated germanium (a-Ge) prepared by homogeneous chemical vapor deposition (HOMOCVD). Like HOMOCVD prepared amorphous hydrogenated silicon, these a-Ge materials exhibit very low ESR spin densities and systematically varying optical gaps and hydrogen contents. Nevertheless, the material displays no subband gap photoluminescence and minimal photoconductivity, suggesting that a spinless defect may ultimately limit the device application of all types of a-Ge and a-(Ge,Si) films.
B.A. Scott, W.L. Olbricht, et al.
JVSTA
A. Gupta, T.M. Shaw, et al.
Journal of Solid State Chemistry
D.J. Wolford, J.A. Bradley, et al.
ICDS 1984
A. Grill, B.S. Meyerson, et al.
Journal of Applied Physics