Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
We have studied tunneling transport through a high-mobility two-dimensional electron gas in a GaSb/AlSb/ InAs/AlSb/GaSb heterostructure. In high perpendicular magnetic fields and at temperatures below 1 K the tunneling conductance shows deviations from regular Shubnikov-de Haas oscillations. An overall decrease in conductance with decreasing temperature is attributed to the formation of a Coulomb gap in the tunneling density of states. Reproducible conductance fluctuations are due to resonant tunneling possibly through interface-related states. © 1994.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
R. Ghez, J.S. Lew
Journal of Crystal Growth
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
Peter J. Price
Surface Science