Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
We have studied tunneling transport through a high-mobility two-dimensional electron gas in a GaSb/AlSb/ InAs/AlSb/GaSb heterostructure. In high perpendicular magnetic fields and at temperatures below 1 K the tunneling conductance shows deviations from regular Shubnikov-de Haas oscillations. An overall decrease in conductance with decreasing temperature is attributed to the formation of a Coulomb gap in the tunneling density of states. Reproducible conductance fluctuations are due to resonant tunneling possibly through interface-related states. © 1994.
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
J.C. Marinace
JES
J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT