S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
The procedures for the liquid phase epitaxial (LPE) growth of high efficiency p-Ga1-xAlxAs,p-GaAs solar cells have been developed. The methods are based on forming the structure by a one step process in which the Zn diffused p-n junction in the n-type GaAs substrate forms in conjunction with the LPE growth of the Zn doped p-Ga1-xAlxAs layer. for structures with 1-10 μm thick Ga1-xAlxAs layers, an isothermal soak of the GaAs substrate in a saturated Ga-Al-As: Zn melt followed by ramp cooling procedures good cells. For structures with < 1 μm thick Ga1-xAlxAs layers, it is mecessary to isothermally soak t he GaAs substrate in an undersaturated melt and ramp cooling is not required. © 1977.
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
O.F. Schirmer, K.W. Blazey, et al.
Physical Review B