Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
We have measured the conductance as a function of gate voltage magnetic field, field orientation, and temperature of a quasi-1D silicon MOSFET in the strongly localized regime. At low temperatures and gate voltages, small changes in gate voltage produce large conductance fluctuations. The pattern of the fluctuations is changed dramatically as the magnetic field is increased, with some peaks vanishing and others growing out of the background. Much of the field dependence of the peak positions for different orientations and temperatures are due to Zeeman energy shifts. © 1987.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
A. Gangulee, F.M. D'Heurle
Thin Solid Films