PaperSubstrate bias effects on electron mobility in silicon inversion layers at low temperaturesA.B. FowlerPhysical Review Letters
PaperIntersubband resonances in sosmos accumulation layersM.J. Uren, T.N. Theis, et al.Solid State Communications
PaperElectrical and physical properties of high-Ge-content Si/SiGe p-type quantum wellsR.A. Kiehl, P.E. Batson, et al.Physical Review B