Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
Measurements of the magnetocapacitance of a two-dimensional electron gas in high mobility GaAs(Ga, Al)As heterostructure confirm, for the first time, the relationship between the density of states and the capacitance of a two-dimensional electron gas. We present the first magnetocapacitance measurements in the fractionally quantized Hall regime. © 1986.
T.N. Morgan
Semiconductor Science and Technology
J. Tersoff
Applied Surface Science
Sung Ho Kim, Oun-Ho Park, et al.
Small
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008