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Microelectronic Engineering
Measurements of the magnetocapacitance of a two-dimensional electron gas in high mobility GaAs(Ga, Al)As heterostructure confirm, for the first time, the relationship between the density of states and the capacitance of a two-dimensional electron gas. We present the first magnetocapacitance measurements in the fractionally quantized Hall regime. © 1986.
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
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Micro and Nano Engineering
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Proceedings of SPIE 1989
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Physica E: Low-Dimensional Systems and Nanostructures