Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
The magnetoconductance of ultranarrow Si accumulation layers has been measured using a pinched metal-oxide-semiconductor field-effect transistor. The data have two noteworthy features. First, the electron density inferred from Shubnikov-de Haas oscillations is much smaller than that expected for our device. Also, structure in the magnetoconductance persists down to low gate voltages where the temperature-dependent conductance appears to be in the limit of one-dimensional strong localization. © 1986 The American Physical Society.
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Ellen J. Yoffa, David Adler
Physical Review B
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009