PaperAdmittance measurements of acceptor freezeout and impurity conduction in Be-doped GaAsT.W. HickmottPhysical Review B
PaperNegative charge, barrier heights, and the conduction-band discontinuity in AlxGa1-xAs capacitorsT.W. Hickmott, P. Solomon, et al.Journal of Applied Physics
PaperDefect centers in oxygen-deficient rf-sputtered SiO2 films. II. ThermoluminescenceT.W. HickmottJournal of Applied Physics
PaperA temperature-independent capacitance in semiconductor-insulator- semiconductor capacitorsT.W. Hickmott, P. SolomonJournal of Applied Physics
