Paper

01 Jan 1985

Magnetotunneling in Al_xGa_1-xAs capacitors

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Abstract

Observations of magnetic freezeout, sequential-single phonon emission, and the effect of Landau levels on tunneling in n-GaAs-undoped AlxGa1-xAs-n+GaAs capacitors are reviewed. © 1985.

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Temperature dependence of the relaxation of injected charge at the polycrystalline-silicon-SiO₂ interface

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Conference paper

MAGNETOTUNNELING AND MAGNETIC FREEZEOUT IN n minus GaAs-UNDOPED Al//xGa//1// minus //xAs minus n plus GaAs CAPACITORS.

T.W. Hickmott, P. Solomon, et al.

ICPS Physics of Semiconductors 1984

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