John G. Long, Peter C. Searson, et al.
JES
Redistribution of hydrogen caused by hot electron injection has been studied in large Al-gate capacitors using internal photoemission followed by hydrogen depth profiling with the 15N nuclear reaction. A large peak of hydrogen (nearly 1015 at./cm2) at the Al/SiO2 interface due to a hydrated layer on the surface of the SiO2 was found to act as a source of hydrogen during the photoinjection. A small fraction of the hydrogen released from this peak was found to be re-trapped near the Si/SiO2 interface if a field of >1 MV/cm was applied to the SiO2 during the injection. Up to 2×1014 atoms/cm2 of hydrogen were found to be trapped at this interface for injected fluences up to 5 C/ cm2. These results are discussed in terms of current models of interface state generation involving hydrogen.
John G. Long, Peter C. Searson, et al.
JES
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
E. Burstein
Ferroelectrics
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics