H.-O. Blom, S. Berg, et al.
JVSTA
Paper
Mechanism for bistability in organic memory elements
Abstract
The resistive switching phenomenon observed in organic semiconductor layers containing granular metal particles was discussed. The features and fabrication of an operational switch were studied. An N shaped equilibrium current-voltage curve was observed for these organic devices. Result show that charge trapping and space-charge field inhibition of injection were responsible for the bistable resistance behavior of organic devices.
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