G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
We have investigated homoepitaxy on H terminated unreconstructed Si(111) at low temperatures. Epitaxy on the (1 × 1) surface requires growth temperatures about 80°C higher than on the bare surface to achieve similar crystal quality. Even at higher temperatures (300°C to 400°C), where excellent growth is expected, we observe a degradation in the surface ordering on the H terminated surface, not observed for growth on the bare surface. © 1995.
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Ming L. Yu
Physical Review B
J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals