Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
Results of self-consistent electronic-structure calculations aluminum deposited on Ge, as a function of metal coverage, provide strong evidence for overlayer metallization. At monolayer metal coverages, the overlayer changes into a (quasi-) two-dimensional metal characterized by a (modulated) ladder-type density of states. The origin of this transition is traced to the metal-semiconductor interlayer-distance relaxation upon metallization. Our results are in agreement with recent experimental observations, and have important implications for Schottky-barrier formation. © 1986 The American Physical Society.
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992