Yan Zhou, Johan Åkerman, et al.
Applied Physics Letters
A spin-transfer torque (STT) switched magnetic tunnel junction (MTJ) enables modern magnetic random access memory (MRAM). Optimization of perpendicularly magnetized MTJ (pMTJ) for MRAM is a comprehensive effort encompassing many materials and device properties characterization techniques, some mature, others novel and innovative. These measurements and characterization methods in combination reveal physical processes of spin-transfer torque switching in a realistic pMTJ, and relationships between materials properties and resulting device performance. An effective set of such metrics made it possible to efficiently optimize STT-switched pMTJ for MRAM. Here we review some of these measurements and metrics, the methodology they brought together, and some lessons learnt in the process.
Yan Zhou, Johan Åkerman, et al.
Applied Physics Letters
Jonathan Z. Sun
IBM J. Res. Dev
J. Cucchiara, Eric E. Fullerton, et al.
Physical Review B - CMMP
D. Bedau, H. Liu, et al.
DRC 2010